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DETERMINATION OF THE BARRIER HEIGHT IN METAL-CDF2 SCHOTTKY DIODES.GARBARCZYK J; KRUKOWSKA FULDE B; LANGER T et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 2; PP. L17-L21; BIBL. 17 REF.Article

Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectricDAMNJANOVIC, V; PONOMARENKO, V. P.SPIE proceedings series. 2003, pp 191-199, isbn 0-8194-4986-5, 9 p.Conference Paper

The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurementsVERRET, D. P.IEEE electron device letters. 1984, Vol 5, Num 5, pp 142-144, issn 0741-3106Article

THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODESCHING YUAN WU.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2909-2912; BIBL. 5 REF.Article

Characteristics of the RuO2-n-GaAs Schottky barrierVANDENBROUCKE, D. A; VAN MEIRHAEGHE, R. L; LAFLERE, W. H et al.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 4, pp 731-738, issn 0022-3727Article

Optimal barrier height for Schottky diode rectifiersASHOK, S.International journal of electronics. 1984, Vol 57, Num 3, pp 429-431, issn 0020-7217Article

Schottky-barrier-height engineering for strained-Si MOSFETsIKEDA, Keiji; YAMASHITA, Yoshimi; ENDOH, Akira et al.DRC : Device research conference. 2004, pp 111-112, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Analysis of junction-barrier-controlled Schottky (JBS) rectifier characteristicsBALIGA, B. J.Solid-state electronics. 1985, Vol 28, Num 11, pp 1089-1093, issn 0038-1101Article

TEMPERATURE DEPENDENCE OF THE SCHOTTKY BARRIER HEIGHT IN GALLIUM ARSENIDEHACKAM R; HARROP P.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 5; PP. 669-672; ABS. RUSSE; BIBL. 14 REF.Serial Issue

Controlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction Schottky diodesKLEINSASSER, A. W; WOODALL, J. M; PETTIT, G. D et al.Applied physics letters. 1985, Vol 46, Num 12, pp 1168-1170, issn 0003-6951Article

Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant SegregationJUN LUO; ZHANG, Shi-Li; QIU, Zhi-Jun et al.IEEE electron device letters. 2009, Vol 30, Num 6, pp 608-610, issn 0741-3106, 3 p.Article

Titanium nitride as a diffusion barrier between nickel silicide and aluminumFINETTI, M; SUNI, I; NICOLET, M.-A et al.Journal of electronic materials. 1984, Vol 13, Num 2, pp 327-340, issn 0361-5235Article

High-barrier Schottky diodes on p-type silicon due to dry-etching damageMU, X. C; FONASH, S. J.IEEE electron device letters. 1985, Vol 6, Num 8, pp 410-412, issn 0741-3106Article

QUELQUES QUESTIONS DE LA THEORIE DES DIODES A BARRIERE DE SCHOTTKYSHEKA DI.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 15-21; BIBL. 15 REF.Article

Tuning the Schottky barrier height in metal : alkaline earth oxide interfacesNUNEZ, Matias; BUONGIORNO NARDELLI, M.Physica status solidi. B. Basic research. 2006, Vol 243, Num 9, pp 2081-2084, issn 0370-1972, 4 p.Conference Paper

Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)LIEHR, M; SCHMID, P. E; LEGOUES, F. K et al.Physical review letters. 1985, Vol 54, Num 19, pp 2139-2142, issn 0031-9007Article

ENHANCED BARRIER HEIGHT OF AU-IN1-XGAXASYP1-Y SCHOTTKY DIODESBHATTACHARYA PK; YEAMAN MD.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 297-300; BIBL. 10 REF.Article

Effect of lateral inhomogeneity of Barrier height on the photoresponse characteristics of Schottky junctionsHORVATH, Z. J; VO VAN TUYEN.SPIE proceedings series. 1998, pp 65-67, isbn 0-8194-2808-6Conference Paper

THE ACCURACY OF SCHOTTKY-BARRIER-HEIGHT MEASUREMENTS ON CLEAN-CLEAVED SILICON.VAN OTTERLOO JD; GERRITSEN LJ.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 723-729; BIBL. 21 REF.Article

Schottky barrier height at the Au/porous silicon interfaceKE, M; MATTHAI, C. C; PAVLOV, A et al.Applied surface science. 1998, Vol 123-24, pp 454-457, issn 0169-4332Conference Paper

Caractéristique volt-ampère d'une diode SchottkyZOTOV, L. V; PETROVSKIJ, V. I; SHVEDOVA, O. I et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 6, pp 1039-1042, issn 0015-3222Article

A hydrophobic oligolamellar lining to surfaces in various tissues : a possible ubiquitous barrierHILLS, B. A.Medical science research. 1992, Vol 20, Num 15, pp 543-550, issn 0269-8951Article

Consequences of spatial distributions of the interface states on the Schottky barrierLU, G. N; BARRET, C; NEFFATI, T et al.Solid-state electronics. 1990, Vol 33, Num 1, pp 1-9, issn 0038-1101Article

Temperature dependent barrier heights in bulk unipolar diodes leading to improved temperature stable performanceKEARNEY, M. J; KELLY, M. J; CONDIE, A et al.Electronics Letters. 1990, Vol 26, Num 10, pp 671-672, issn 0013-5194Article

METAL/N-GAP SCHOTTKY BARRIER HEIGHTSLEI TF; LEE CL; CHANG CY et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 12; PP. 1035-1037; BIBL. 8 REF.Article

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